top view summary v (br)dss =20v; r ds(on) =0.040 w; i d =5.4a description this new generation of high density mosfets from zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power management applications. features low on-resistance fast switching speed low threshold low gate drive low profile soic package applications dc - dc converters power management functions disconnect switches motor control ordering information device reel size (inches) tape width (mm) quantity per reel ZXM64N02XTA 7 12mm embossed 1000 units zxm64n02xtc 13 12mm embossed 4000 units device marking zxm 6 4n02 20v n-channel enhancement mode mosfet msop8 zxm64n02x 1234 8 7 65 s s s g d d d d 1 i ssue 2 - february 2008
zxm64n02x 2 thermal resistance parameter symbol value unit junction to ambient (a) r q ja 113 c/w junction to ambient (b) r q ja 70 c/w notes (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions (b) for a device surface mounted on fr4 pcb measured at t < 10 secs. (c) repetitive rating - pulse width limited by maximum junction temperature. refer to transient thermal impedance graph. absolute maximum ratings. parameter symbol limit unit drain-source voltage v dss 20 v gate- source voltage v gs 12 v continuous drain current (v gs =4.5v; t a =25c)(b) (v gs =4.5v; t a =70c)(b) i d 5.4 4.3 a pulsed drain current (c) i dm 30 a continuous source current (body diode)(b) i s 2.4 a pulsed source current (body diode)(c) i sm 30 a power dissipation at t a =25c (a) linear derating factor p d 1.1 8.8 w mw/c power dissipation at t a =25c (b) linear derating factor p d 1.8 14.4 w mw/c operating and storage temperature range t j :t stg -55 to +150 c issue 2 - february 2008
zxm64n02x 0.1 10 100 0.0001 100 0 80 160 v ds - drain-source voltage (v) safe operating area ref note (a) 100m 1 100 i d - drain current (a) d=0.1 d=0.2 thermal resistance (c/w) 80 40 0 max power dissipation (watts) 2.0 1.0 0 t - temperature (c) derating curve single pulse d=0.5 themal resistance (c/w) 0.0001 0 1000 60 120 single pulse d=0.5 d=0.2 d=0.1 1 10 0.5 1.5 140120 100 60 40 20 10 1 0.01 0.001 100 10 1 0.1 0.01 0.001 90 30 60 20 0.1 pulse width (s) transient thermal impedance refer note (b) pulse width (s) transient thermal impedance refer note (a) refer note (b) refer note (a) typical characteristics dc 1s 100ms 10ms 1ms 100us refer note (a) 3 i ssue 2 - february 2008
electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. static drain-source breakdown voltage v (br)dss 20 v i d =250 m a, v gs =0v zero gate voltage drain current i dss 1 m a v ds =20v, v gs =0v gate-body leakage i gss 100 na v gs = 12v, v ds =0v gate-source threshold voltage v gs(th) 0.7 v i d =250 m a, v ds = v gs static drain-source on-state resistance (1) r ds(on) 0.040 0.050 w w v gs =4.5v, i d =3.8a v gs =2.7v, i d =1.9a forward transconductance (3) g fs 6.1 s v ds =10v,i d =1.9a dynamic (3) input capacitance c iss 1100 pf v ds =15 v, v gs =0v, f=1mhz output capacitance c oss 350 pf reverse transfer capacitance c rss 100 pf switching(2) (3) turn-on delay time t d(on) 5.7 ns v dd =10v, i d =3.8a r g =6.2 w , r d =2.6 w (refer to test circuit) rise time t r 9.6 ns turn-off delay time t d(off) 28.3 ns fall time t f 11.6 ns total gate charge q g 16 nc v ds =16v,v gs =4.5v, i d =3.8a (refer to test circuit) gate-source charge q gs 3.5 nc gate drain charge q gd 5.4 nc source-drain diode diode forward voltage (1) v sd 0.95 v t j =25c, i s =3.8a, v gs =0v reverse recovery time (3) t rr 23.7 ns t j =25c, i f =3.8a, di/dt= 100a/ m s reverse recovery charge(3) q rr 13.3 nc (1) measured under pulsed conditions. width=300 m s. duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing. 4 zxm64n02x issue 2 - february 2008
0.1 1 10 1.5 2 3 0.1 1 100 0 1 2 200 50 -100 0.1 1 10 v ds - drain-source voltage (v) output characteristics 0.1 10 100 i d - drain current (a) vgs 2.5v vds=10v i d - drain current (a) 100 10 0.1 v gs - gate-source voltage (v) typical transfer characteristics r ds(on) - drain-source on-resistance ( w ) 1 0.1 0.01 i d - drain current (a) on-resistance v drain current 4.5v i d - drain current (a) 100 10 vgs 0.1 v ds - drain-source voltage (v) output characteristics normalised r ds(on) and vgs (th) 1.6 0.8 0 t j - junction temperature (c) normalised r ds(on) and v gs(th) v temperature i sd - reverse drain current (a) 100 1 100m v sd - source-drain voltage (v) source-drain diode forward voltage t=150c t=25c +150c t=150c vgs=4.5v t=25c rds(on) id=3.8a vgs=vds id=250a vgs(th) 10 0.5 1.5 25c 2.0v 1.5v 3.0v 3.5v 4.0v 4.5v 5.0v 1 1 3.0v 2.5v 2.0v 1.5v 3.5v 5v 4.0v 2.5 1 150 100 0 -50 0.2 0.4 0.6 1.0 1.2 1.4 10 vgs=2.0v vgs=2.5v vgs=4.5v typical characteristics 5 zxm64n02x issue 2 - february 2008
basic gate charge waveform gate charge test circuit switching time waveforms switching time test circuit 0.1 100 0 8 16 v ds - drain source voltage (v) capacitance v drain-source voltage 0 1000 2000 c - capacitance (pf) v gs - gate-source voltage (v) 6.0 3.0 0 q -charge (nc) gate-source voltage v gate charge ciss coss crss vgs=0v f=1mhz 246 101214 1.0 2.0 4.0 5.0 250 500 750 1250 1500 1750 vds=16v i d =3.8a 11 0 typical characteristics zxm64n02x 6 i ssue 2 - february 2008
zxm64n02x h e d e x 6 a a1 l c 1 234 5678 q b conforms to jedec mo-187 iss a package dimensions pad layout details 7 dim millimetres inches min max min max a 1.10 0.043 a1 0.05 0.15 0.002 0.006 b 0.25 0.40 0.010 0.016 c 0.13 0.23 0.005 0.009 d 2.90 3.10 0.114 0.122 e 0.65 bsc 0.0256 bsc e 2.90 3.10 0.114 0.122 h 4.90 bsc 0.193 bsc l 0.40 0.70 0.016 0.028 q 0 6 0 6 zetex plc. chadderton technology park , chadderton, oldham, ol9-9ll , united kingdom. telephone: (44)161 622 4422 (sales), (44)161 622 4444 (general enquiries) fax: (44)161 622 4420 zetex gmbh zetex inc. zetex (asia) ltd. these are supported by kustermann-park 700 veterans mem. highway metroplaza, tower 1 agents and distributors in d-81 541 mnchen hauppauge, ny 117 88 h ing fong ro ad m ajor countries world-wide germany usa kwai fong, hong kong zetex plc 1999 telefon: (49) 89 45 49 49 0 telephone: (516) 543-7100 telephone:(852) 26100 611 fax: (49) 89 45 49 49 49 fax: (516) 864-7630 fax: (852) 24250 494 internet:http://www.zetex.com this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned . the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. issue 2 - february 2008
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